A Physical Unclonable Function with Redox-based Nanoionic Resistive Memory

TitleA Physical Unclonable Function with Redox-based Nanoionic Resistive Memory
Publication TypeJournal Article
Year of PublicationIn Press
AuthorsKim, J., T. Ahmed, H. Nili, J. Yang, D. Seok Jeong, P. Beckett, S. Sriram, D. C. Ranasinghe, and O. Kavehei
JournalIEEE Transactions on Information Forensics and Security
Date Published2017

Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a uniqueset of characteristics that make them promising candidates for thenext generation of low-cost, low-power, tiny and secure physicalunclonable functions (PUFs). Their underlying stochastic ionicconduction behavior, intrinsic nonlinear current-voltage characteristics and their well known nano-fabrication process variabilitymight normally be considered disadvantageous ReRAM features.However, using a combination of a novel architecture and specialperipheral circuitry this paper exploits these non-idealities in aphysical one-way function, nonlinear resistive PUF, potentiallyapplicable to a variety of cyber-physical security applications.We experimentally verify the performance of valency changemechanism (VCM)-based ReRAM in nano-fabricated crossbararrays across multiple dies and runs. In addition to supportinga massive pool of challenge-response pairs (CRPs), using acombination of experiment and simulation our proposed PUFexhibits a reliability of 98:67%, a uniqueness of 49:85%, adiffuseness of 49:86%, a uniformity of 47:28%, and a bit-aliasingof 47:48%