|Title||Read Operation Performance of Large SelectorLess Cross-Point Array with Self-Rectifying Memristive Device|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Gao, Y., O. Kavehei, S. Al-Sarawi, D. C. Ranasinghe, and D. Abbott|
|Journal||Integration, the VLSI Journal|
|Keywords||Memristive device, RRAM, Security, crossbar array memory, memristor, power consumption, read margin, sneak-path currents, verilog-A|
Memristive device based passive crossbar arrays hold a great promise for high-density and non-volatile memories. A significant challenge of ultra-high density integration of these crossbars is unwanted sneak-path currents. The most common way of addressing this issue today is an integrated or external selecting device to block unwanted current paths. In this paper, we use a memristive device with intrinsic rectifying behavior to suppress sneak-path currents in the crossbar. We systematically evaluate the read operation performance of large-scale crossbar arrays with regard read margin and power consumption for different crossbar sizes, nanowire interconnect resistances, ON and OFF resistances, rectification ratios under different read-schemes. Outcomes of this study allow improved understanding of the trade-off between read margin, power consumption and read-schemes. Most importantly, this study provides a guideline for circuit designers to improve the performance of oxide-based resistive memory (RRAM) based cross-point arrays. Overall, selfrectifying behavior of the memristive device efficiently improves the read operation performance of large-scale selectorless cross-point arrays.